The Effect of the Fractal Clusters on the Si (111)-7×7 Surface

one of the most important ingredients responsible for the success of integrated silicon technology is the Metal Oxide Semiconductor Field-Effect Transistor (MOSFET), and a major reason for its success is the MOSFET's scalability. Although the industry uses silicon and silicon dioxide in the electronic devices, it can be used for opto-electronic devices as well due to formation of fractal oxide clusters on the silicon substrate. The Nano-opto electronics revolution has been possible through an extensive study of the optical properties of silicon dioxide structure on silicon substrate. This includes an investigation of the surface structure and stacking fault of silicon and oxygen atoms on Si (111)-7×7 surfaces . Indeed, there are some issues which are playing important rules in the formation of the longwavelength absorption spectral wing. One issue is stacking fault atoms in the Si (111)-7×7 unit cell which determines the monotonic decrease of absorption with increase of wavelength and the other issue is due to incoming oxygen atom which leads to breaking silicon and oxygen bonds and causes the appearance of the additional spectral maximum. We have thus studied the effect of variation of the parameters of fractal clusters on optical spectra by using coupled-dipole method. In this work, we considered particle electrodynamics dipole-dipole interactions, for the appearance of individual specific features in the spectral absorption.